The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems. It starts with the motivation at the beginning of the project and a summary of its major achievements. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Abstract In order to improve the electrical and frequency characteristics of SiGe hete- rojunction bipolar transistors (HBTs), a novel structure of SOI SiGe hetero- junction bipolar. ![]() The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. Design rules of AIGaAsIGaAs heterojunction bipolar transistors for power applications are presented and compared to those for Si microwave power transistors. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. The heterojunction bipolar transistor ( HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The electronic chip is becomingĪn ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. A method of fabricating a hetero-junction bipolar transistor (HBT) is disclosed, where the HBT has a structure incorporating a hetero-junction bipolar structure disposed on a substrate. The device combines robustness with very high. ![]() The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads.
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